New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

Ming-Dou Ker*, Kuo Chun Hsu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

Original languageEnglish
Pages841-844
Number of pages4
StatePublished - 1 Dec 2004
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
Duration: 6 Dec 20049 Dec 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
CountryTaiwan
CityTainan
Period6/12/049/12/04

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  • Cite this

    Ker, M-D., & Hsu, K. C. (2004). New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology. 841-844. Paper presented at 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.