We studied the threshold voltage degradation in MOSFETs caused by the ion-channeling through the poly-silicon gate in the low acceleration source/drain ion-implantation process, and investigated the influence of the degradation phenomena on the VLSI circuit operation. It was clarified that the short channel transistor is more sensitive to the ion channeling than the long channel transistor, which provides new problems of small size transistor design in VLSI circuits.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|State||Published - 1 Dec 1986|
|Name||Conference on Solid State Devices and Materials|