TY - GEN
T1 - NEW DEGRADATION PHENOMENA INDUCED BY ION-IMPLANTATION CHANNELING IN SHORT CHANNEL TRANSISTORS.
AU - Nitayama, Akihiro
AU - Takato, Hiroshi
AU - Riichiro, Shirota
PY - 1986/12/1
Y1 - 1986/12/1
N2 - We studied the threshold voltage degradation in MOSFETs caused by the ion-channeling through the poly-silicon gate in the low acceleration source/drain ion-implantation process, and investigated the influence of the degradation phenomena on the VLSI circuit operation. It was clarified that the short channel transistor is more sensitive to the ion channeling than the long channel transistor, which provides new problems of small size transistor design in VLSI circuits.
AB - We studied the threshold voltage degradation in MOSFETs caused by the ion-channeling through the poly-silicon gate in the low acceleration source/drain ion-implantation process, and investigated the influence of the degradation phenomena on the VLSI circuit operation. It was clarified that the short channel transistor is more sensitive to the ion channeling than the long channel transistor, which provides new problems of small size transistor design in VLSI circuits.
UR - http://www.scopus.com/inward/record.url?scp=0022905821&partnerID=8YFLogxK
U2 - 10.7567/SSDM.1986.A-9-3
DO - 10.7567/SSDM.1986.A-9-3
M3 - Conference contribution
AN - SCOPUS:0022905821
SN - 493081314X
T3 - Conference on Solid State Devices and Materials
SP - 483
EP - 486
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -