NEW DEGRADATION PHENOMENA INDUCED BY ION-IMPLANTATION CHANNELING IN SHORT CHANNEL TRANSISTORS.

Akihiro Nitayama*, Hiroshi Takato, Shirota Riichiro

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We studied the threshold voltage degradation in MOSFETs caused by the ion-channeling through the poly-silicon gate in the low acceleration source/drain ion-implantation process, and investigated the influence of the degradation phenomena on the VLSI circuit operation. It was clarified that the short channel transistor is more sensitive to the ion channeling than the long channel transistor, which provides new problems of small size transistor design in VLSI circuits.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages483-486
Number of pages4
ISBN (Print)493081314X
DOIs
StatePublished - 1 Dec 1986

Publication series

NameConference on Solid State Devices and Materials

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