A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.
|Number of pages||4|
|Journal||Proceedings - IEEE International Symposium on Circuits and Systems|
|State||Published - 1 Dec 2005|
|Event||IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan|
Duration: 23 May 2005 → 26 May 2005