New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

Ming-Dou Ker, Jung Sheng Chen, Ching Yun Chu

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.

Original languageEnglish
Article number1465473
Pages (from-to)3861-3864
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: 23 May 200526 May 2005

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