New Curvature-Compensation Technique for CMOS Bandgap Reference With Sub-1-V Operation

Ming-Dou Ker, Jung Sheng Chen

Research output: Contribution to journalArticlepeer-review

100 Scopus citations


A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic n-p-n and p-n-p bipolar junction transistor devices in the CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25- μ m CMOS process. The experimental results have confirmed that, with the minimum supply voltage of 0.9 V, the output reference voltage at 536 mV has a temperature coefficient of 19.5 ppm/°C from 0 °C to 100 °C. With a 0.9-V supply voltage, the measured power noise rejection ratio is —25.5 dB at 10 kHz.

Original languageEnglish
Pages (from-to)667-671
Number of pages5
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Issue number8
StatePublished - 1 Jan 2006


  • Bandgap voltage reference
  • curvature-compensation technique
  • temperature coefficient
  • voltage reference

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