A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic n-p-n and p-n-p bipolar junction transistor devices in the CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25- μ m CMOS process. The experimental results have confirmed that, with the minimum supply voltage of 0.9 V, the output reference voltage at 536 mV has a temperature coefficient of 19.5 ppm/°C from 0 °C to 100 °C. With a 0.9-V supply voltage, the measured power noise rejection ratio is —25.5 dB at 10 kHz.
|Number of pages||5|
|Journal||IEEE Transactions on Circuits and Systems I: Regular Papers|
|State||Published - 1 Jan 2006|
- Bandgap voltage reference
- curvature-compensation technique
- temperature coefficient
- voltage reference