In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.
|Title of host publication||2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers|
|State||Published - 16 Jul 2012|
|Event||2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan|
Duration: 23 Apr 2012 → 25 Apr 2012
|Name||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Conference||2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012|
|Period||23/04/12 → 25/04/12|