New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

E. R. Hsieh*, Steve S. Chung, J. C. Wang, C. S. Lai, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
StatePublished - 16 Jul 2012
Event2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
Duration: 23 Apr 201225 Apr 2012

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
CountryTaiwan
CityHsinchu
Period23/04/1225/04/12

Fingerprint Dive into the research topics of 'New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices'. Together they form a unique fingerprint.

  • Cite this

    Hsieh, E. R., Chung, S. S., Wang, J. C., Lai, C. S., Tsai, C. H., Huang, R. M., Tsai, C. T., & Liang, C. W. (2012). New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers [6210148] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210148