New CMOS readout circuit design for the IR FPA with adaptive gain control and current-mode background suppression

Chih Cheng Hsieh*, Chung-Yu Wu, Far Wen Jih, Tai Ping Sun, Horng Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called the buffered gate modulation input (BGMI) circuit is proposed and analyzed. This new readout circuit can achieve a high charge sensitivity with the adaptive current gain and has a good immunity from threshold-voltage variations. Moreover, the readout dynamic range is dramatically increased by using a threshold-voltage independent current-mode background suppression technique. The BGMI circuit with current-mode background suppression has been designed and simulated. It has been shown that high injection efficiency, high charge sensitivity, high dynamic range, large storage capacity, and low noise performance are achieved in a 50×50 μm2 pixel size. These advantageous traits make the BGMI circuit suitable for the applications with a large background current range.

Original languageEnglish
Pages (from-to)137-140
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 IEEE International Symposium on Circuits and Systems, ISCAS. Part 1 (of 4) - Atlanta, GA, USA
Duration: 12 May 199615 May 1996

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