New CMOS devices and compact modeling

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

FinFET provides several advantages over the planar MOSFET structure - less short-channel effect, less variation in threshold voltage, and higher carrier mobility, allowing scaling to 5nm gate length. Using embedded SRAM as the entry point, FinFET may enter manufacturing at the 32nm node. BSIM-MG is a turn-key compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. A compact model of multi-gate transistors will facilitate their adoption.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages5-7
Number of pages3
DOIs
StatePublished - 1 Dec 2007
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16 Dec 200720 Dec 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices, IWPSD
CountryIndia
CityMumbai
Period16/12/0720/12/07

Keywords

  • CMOS scaling
  • Compact model
  • FinFET
  • MOSFET
  • SRAM

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