By keeping the rising and falling slopes constant and scanning the highest and lowest levels of the gate pulse, the threshold and flatband voltage distribution under the channel can be reproduced. The method does not require information about the impurity concentration. It was applied to p-MOSFET measurements, and useful information about the generated fixed trapped charge distribution along the channel was obtained.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - Dec 1991|
|Event||1991 Symposium on VLSI Technology - Oiso, Jpn|
Duration: 28 May 1991 → 30 May 1991