New charge pumping method for direct measurement of spatial distribution of fixed charge

M. Tsuchiaki*, H. S. Momose, T. Morimoto, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

By keeping the rising and falling slopes constant and scanning the highest and lowest levels of the gate pulse, the threshold and flatband voltage distribution under the channel can be reproduced. The method does not require information about the impurity concentration. It was applied to p-MOSFET measurements, and useful information about the generated fixed trapped charge distribution along the channel was obtained.

Original languageEnglish
Pages (from-to)19-20
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - Dec 1991
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 28 May 199130 May 1991

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