New characterization methodology for Flash memory cell using CAST structure

Mcdonald Fan*, U. C. Liu, Jyh-Chyurn Guo, M. T. Wang, F. Shone

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The hole trapping occurred during P/E operation in Flash EEPROM. To our knowledge, there still no effective method to characterize the endurance performance of Flash EEPROM in the test key level. In this paper, we propose a simple and fast method to evaluate the endurance performance on a 12 K bits test Flash EEPROM Cell Array Stress Test (CAST) array. Base on this method, we can easily detect the subtle defects as well as the effectiveness of hole detrapping method to suppress the tail-bits.

Original languageEnglish
Pages113-117
Number of pages5
DOIs
StatePublished - 1 Jan 1998
EventProceedings of the 1998 IEEE International Conference on Microelectronic Test Structures - Kanazawa, Jpn
Duration: 23 Mar 199826 Mar 1998

Conference

ConferenceProceedings of the 1998 IEEE International Conference on Microelectronic Test Structures
CityKanazawa, Jpn
Period23/03/9826/03/98

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