The hole trapping occurred during P/E operation in Flash EEPROM. To our knowledge, there still no effective method to characterize the endurance performance of Flash EEPROM in the test key level. In this paper, we propose a simple and fast method to evaluate the endurance performance on a 12 K bits test Flash EEPROM Cell Array Stress Test (CAST) array. Base on this method, we can easily detect the subtle defects as well as the effectiveness of hole detrapping method to suppress the tail-bits.
|Number of pages||5|
|State||Published - 1 Jan 1998|
|Event||Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures - Kanazawa, Jpn|
Duration: 23 Mar 1998 → 26 Mar 1998
|Conference||Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures|
|Period||23/03/98 → 26/03/98|