NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFET'S.

Daisuke Ueda; A. Shimano; I. Kitamura; H. Takagi; G. Kano

doi:10.1109/EDL.1986.26384

NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFET'S.

Daisuke Ueda^*, A. Shimano, I. Kitamura, H. Takagi, G. Kano

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The technique outlined here involves channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using this technique. A 1050-V double-diffused MOSFET (DMOSFET) was experimentally fabricated with a negative minus 2 voltage of minus 2 V.

Original language	English
Pages (from-to)	311-313
Number of pages	3
Journal	Electron device letters
Volume	EDL-7
Issue number	5
DOIs	https://doi.org/10.1109/EDL.1986.26384
State	Published - 1 May 1986

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title = "NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFET'S.",

abstract = "The technique outlined here involves channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using this technique. A 1050-V double-diffused MOSFET (DMOSFET) was experimentally fabricated with a negative minus 2 voltage of minus 2 V.",

author = "Daisuke Ueda and A. Shimano and I. Kitamura and H. Takagi and G. Kano",

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AU - Kitamura, I.

AU - Takagi, H.

AU - Kano, G.

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AB - The technique outlined here involves channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using this technique. A 1050-V double-diffused MOSFET (DMOSFET) was experimentally fabricated with a negative minus 2 voltage of minus 2 V.

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NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFET'S.

Abstract

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