NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFET'S.

Daisuke Ueda*, A. Shimano, I. Kitamura, H. Takagi, G. Kano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The technique outlined here involves channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using this technique. A 1050-V double-diffused MOSFET (DMOSFET) was experimentally fabricated with a negative minus 2 voltage of minus 2 V.

Original languageEnglish
Pages (from-to)311-313
Number of pages3
JournalElectron device letters
VolumeEDL-7
Issue number5
DOIs
StatePublished - 1 May 1986

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