New accurate method to analyze both floating gate charge and tunnel oxide trapped charge profile in NAND flash memory

Shirota Riichiro, B. J. Yang, Y. Y. Chiu, H. T. Chen, S. F. Ng, P. Y. Wang, J. H. Chang, I. Kurachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

New method to extract the amount of floating (FG) charge (QFG) apart from oxide trapped charge (Qox) generated by program and erase (P/E) cycles is proposed, for the first time. QFG shift by P/E cycling shows asymmetry between programmed and erased states as follows; QFG exhibits the peak at 100 cycles in programmed state, while QFG monotonically reduces in erased state. Next, the midgap voltage (Vmid) shift of the cell caused by the generation of Qox is also extracted by this method. Therefore, it enables to analyze the profiles of the hole and electron-trap separately across the oxide in detail. It is demonstrated that the hole-trap is mainly distributed near to Si surface and the centroid of electron-trap is located near to the middle of oxide. In addition, it is found that hole-trap near to Si has strong dependence on erase bias.

Original languageEnglish
Title of host publication2014 IEEE 6th International Memory Workshop, IMW 2014
PublisherIEEE Computer Society
ISBN (Print)9781479935949
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE 6th International Memory Workshop, IMW 2014 - Taipei, Taiwan
Duration: 18 May 201421 May 2014

Publication series

Name2014 IEEE 6th International Memory Workshop, IMW 2014

Conference

Conference2014 IEEE 6th International Memory Workshop, IMW 2014
CountryTaiwan
CityTaipei
Period18/05/1421/05/14

Keywords

  • endurance
  • Flash memory
  • reliability
  • trap

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    Riichiro, S., Yang, B. J., Chiu, Y. Y., Chen, H. T., Ng, S. F., Wang, P. Y., Chang, J. H., & Kurachi, I. (2014). New accurate method to analyze both floating gate charge and tunnel oxide trapped charge profile in NAND flash memory. In 2014 IEEE 6th International Memory Workshop, IMW 2014 [6849364] (2014 IEEE 6th International Memory Workshop, IMW 2014). IEEE Computer Society. https://doi.org/10.1109/IMW.2014.6849364