Neuron-bipolar junction transistor (v-BJT) - a new device structure for VLSI neural network implementation

Chung-Yu Wu*, Wen Cheng Yen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

A new device structure called the neuron-bipolar junction transistor(vBJT) for the compact implementation of VLSI neural network is proposed and analyzed. In the new device structure, the parasitic PNP bipolar junction transistor in the CMOS process is used to implement the neuron whereas the spreading base resistor array is used to realize the synapse weights for various neuron inputs. The multi-emitter structure can also be used to generate the multi-out neuron response. The vBJT neuron cell has the advantages of compact structure and small chip size. The vBJT neuron cell has been successfully applied to the implementation of the analog Hamming neural network. The analog Hamming network can store many sets of examplar patterns with different gray levels. Moreover, the input patterns can be weighted or scaled to eliminate the common offsets and increase the dynamic range and the processing flexibility. With simple and compact structure and high integration capability, the proposed vBJT has a great potential in the VLSI implementation of neural network.

Original languageEnglish
Pages277-280
Number of pages4
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 5th IEEE International Conference on Electronics, Circuits and Systems (ICECS'98) - Surfing the Waves of Science and Technology - Lisboa, Portugal
Duration: 7 Sep 199810 Sep 1998

Conference

ConferenceProceedings of the 1998 5th IEEE International Conference on Electronics, Circuits and Systems (ICECS'98) - Surfing the Waves of Science and Technology
CityLisboa, Portugal
Period7/09/9810/09/98

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