Negative Differential Resistance of AlGaAs/GaAs Heterojunction Bipolar Transistors: Influence of Emitter Edge Current

J. R. Waldrop, Mau-Chung Chang

Research output: Contribution to journalArticle

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Abstract

We report an electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the de gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude.

Original languageEnglish
Pages (from-to)8-10
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number1
DOIs
StatePublished - 1 Jan 1995

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