Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Wei-Kuo Chen*, R. H. Cheng, J. Ou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).

Original languageEnglish
Pages (from-to)1373-1375
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number10
DOIs
StatePublished - 8 Sep 1997

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