Negative capacitance, n-channel, Si FinFETs: Bi-directional Sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect

Hong Zhou, Daewoong Kwon, Angada B. Sachid, Yuhung Liao, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chen-Ming Hu, Sayeef Salahuddin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations

Abstract

We report on negative capacitance (NC) FinFETs with ferroelectric Hf0.5Zr0.5O2 (HZO) as gate dielectric on fully depleted silicon on insulator (FDSOI) substrate with various channel length (LCH) of 450 nm to 30 nm and multiple fin widths (WFIN) of 200 nm to 30 nm. We demonstrate all signature characteristics expected from NCFET: nearly hysteresis free operation (∼3 mV), <60 mV/decade subthreshold swing (SS) with an average SS of 54.5 mV/dec for ∼2 orders of ID and to the best of our knowledge, for the first time in Si MOSFETs, negative Drain Induced Barrier Lowering (DIBL) and Negative Differential Resistance (NDR). Remarkably, we observe significant improvement in the short channel effect compared to control FinFETs: both SS and DIBL are substantially lower for the NCFET for the same Lch/WFin ratio. Importantly, these benefits become increasingly larger for shorter channel lengths.

Original languageEnglish
Title of host publication2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages53-54
Number of pages2
ISBN (Electronic)9781538642160
DOIs
StatePublished - 25 Oct 2018
Event38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States
Duration: 18 Jun 201822 Jun 2018

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2018-June
ISSN (Print)0743-1562

Conference

Conference38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
CountryUnited States
CityHonolulu
Period18/06/1822/06/18

Fingerprint Dive into the research topics of 'Negative capacitance, n-channel, Si FinFETs: Bi-directional Sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect'. Together they form a unique fingerprint.

Cite this