Negative capacitance III-V FinFETs for ultra-low-power applications

Edward Yi Chang*, Quang Ho Luc, Nhan Ai Tran, Yueh Chin Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we report on negative capacitance (NC) In0.53Ga0.47As FinFETs using ferroelectric (FE) HfZrOx (HZO) as the gate dielectric, exhibiting bi-directional sub-40 mV/dec subthreshold slope (SS) at room temperature. The FE properties of HZO materials are characterized with various film thicknesses using the identical annealing conditions. The scaled HZO thickness (3 nm) shows a small Ids - Vgh hysteresis of 0.07 V for InGaAs NC FinFET which can be attributed to the capacitance match. We also show minimum SSrev of 23 and SSfor of 34 mV/dec on InGaAs NC FinFETs with 5 nm HZO thin film. III-V NC FinFETs with HZO FE materials can be very promising for extremely-high-performance and ultra-low-power CMOS applications.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 17
EditorsDurga Misra, Stefan De Gendt, S. Kilgore, Koji Kita, Shadi Dayeh, K. Kakushima
PublisherElectrochemical Society Inc.
Pages3-7
Number of pages5
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2019
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 - 236th ECS Meeting - Atlanta, United States
Duration: 13 Oct 201917 Oct 2019

Publication series

NameECS Transactions
Number1
Volume92
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 - 236th ECS Meeting
CountryUnited States
CityAtlanta
Period13/10/1917/10/19

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  • Cite this

    Chang, E. Y., Luc, Q. H., Tran, N. A., & Lin, Y. C. (2019). Negative capacitance III-V FinFETs for ultra-low-power applications. In D. Misra, S. De Gendt, S. Kilgore, K. Kita, S. Dayeh, & K. Kakushima (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 (1 ed., pp. 3-7). (ECS Transactions; Vol. 92, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/09201.0003ecst