Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation

J. P. Duarte, Y. K. Lin, Y. H. Liao, A. Sachid, M. Y. Kao, H. Agarwal, P. Kushwaha, K. Chatterjee, D. Kwon, H. L. Chang, S. Salahuddin, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A complete simulation framework is presented for Negative Capacitance FinFETs including Numerical Simulation, Compact Modeling, and Circuit Evaluation. A 2D Numerical Simulation for FinFETs coupled with the Landau's Ferroelectric Model captures device characteristics. A new version of the distributed Negative-Capacitance FinFET Compact Model is also presented in this work, where influence of short-channel effects in Ferroelectric voltage amplification are newly incorporated. Finally, a detailed analysis, from an energy perspective, is presented for the gate voltage amplification of Negative Capacitance FinFETs in ring-oscillator circuits.

Original languageEnglish
Title of host publicationSISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-128
Number of pages6
ISBN (Electronic)9781538667880
DOIs
StatePublished - 28 Nov 2018
Event2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 - Austin, United States
Duration: 24 Sep 201826 Sep 2018

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2018-September

Conference

Conference2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018
CountryUnited States
CityAustin
Period24/09/1826/09/18

Keywords

  • component
  • formatting
  • insert
  • style
  • styling

Fingerprint Dive into the research topics of 'Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation'. Together they form a unique fingerprint.

Cite this