Negative Capacitance FET with 1.8-nm-Thick Zr-Doped HfO2 Oxide

Daewoong Kwon*, Suraj Cheema, Nirmaan Shanker, Korok Chatterjee, Yu Hung Liao, Ava J. Tan, Chen-Ming Hu, Sayeef Salahuddin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Fingerprint Dive into the research topics of 'Negative Capacitance FET with 1.8-nm-Thick Zr-Doped HfO<sub>2</sub> Oxide'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science