Negative Capacitance FET with 1.8-nm-Thick Zr-Doped HfO2 Oxide

Daewoong Kwon*, Suraj Cheema, Nirmaan Shanker, Korok Chatterjee, Yu Hung Liao, Ava J. Tan, Chen-Ming Hu, Sayeef Salahuddin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness, a subthreshold swing (SS) steeper by more than 20 mV/decade and larger than 10X reduction in the OFF current ( {I}-{ \mathrm{OFF}} ) is observed at 30-nm channel length at constant {I}-{ \mathrm{\scriptscriptstyle ON}}. On the other hand, at matched {I} -{ \mathrm{\scriptscriptstyle OFF}} , the NCFET provides a larger ON current at constant {V}-{\mathrm {DD}}. Our results indicate that the beneficial characteristic offered by the NCFETs can be obtained at scaled channel lengths, while using oxide layers whose thickness is comparable to the high- {K} oxide layer used in ultra-scaled nodes.

Original languageEnglish
Article number8695029
Pages (from-to)993-996
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number6
DOIs
StatePublished - 1 Jun 2019

Keywords

  • PFM analysis
  • Ultrathin
  • ferroelectric
  • negative capacitance FET

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