Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

J. L. Shen; J. Y. Chang; H. C. Liu; Wu-Ching Chou; Y. F. Chen; T. Jung; M. C. Wu

doi:10.1016/S0038-1098(00)00356-2

Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

J. L. Shen^*, J. Y. Chang, H. C. Liu, Wu-Ching Chou, Y. F. Chen, T. Jung, M. C. Wu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

14 Scopus citations

Abstract

The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction.

Original language	English
Pages (from-to)	431-435
Number of pages	5
Journal	Solid State Communications
Volume	116
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1098(00)00356-2
State	Published - 20 Oct 2000

Access to Document

10.1016/S0038-1098(00)00356-2

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities'. Together they form a unique fingerprint.

Cite this

Shen, J. L., Chang, J. Y., Liu, H. C., Chou, W-C., Chen, Y. F., Jung, T., & Wu, M. C. (2000). Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities. Solid State Communications, 116(8), 431-435. https://doi.org/10.1016/S0038-1098(00)00356-2

@article{c381ba3f2bee4af2aa4193c4f5ee8d58,

title = "Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities",

abstract = "The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction.",

author = "Shen, {J. L.} and Chang, {J. Y.} and Liu, {H. C.} and Wu-Ching Chou and Chen, {Y. F.} and T. Jung and Wu, {M. C.}",

year = "2000",

month = oct,

day = "20",

doi = "10.1016/S0038-1098(00)00356-2",

language = "English",

volume = "116",

pages = "431--435",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

AU - Shen, J. L.

AU - Chang, J. Y.

AU - Liu, H. C.

AU - Chou, Wu-Ching

AU - Chen, Y. F.

AU - Jung, T.

AU - Wu, M. C.

PY - 2000/10/20

Y1 - 2000/10/20

N2 - The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction.

AB - The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction.

UR - http://www.scopus.com/inward/record.url?scp=0034298638&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(00)00356-2

DO - 10.1016/S0038-1098(00)00356-2

M3 - Article

AN - SCOPUS:0034298638

VL - 116

SP - 431

EP - 435

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -