Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

J. L. Shen*, J. Y. Chang, H. C. Liu, Wu-Ching Chou, Y. F. Chen, T. Jung, M. C. Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalSolid State Communications
Volume116
Issue number8
DOIs
StatePublished - 20 Oct 2000

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