Nearly fully transparent InGaZnO thin film transistors with Mo-InGaZnO electrodes: The possibility of homogeneous InGaZnO based thin film transistors

Hung Chi Wu, Chao-Hsin Chien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this letter, we demonstrate high performance and highly transparent InGaZnO thin film transistors (IGZO-TFTs) with nearly metal-free Mo doped IGZO source/drain (S/D) electrodes by co-sputtering. The electrical parameters such as filed effect mobility, on/off ratio and subthreshold swing are 15.9 cm2/V sec, 3.82×107 and 300 mV/decade, respectively. The electrical performance and reliability of the IGZO-TFTs with Mo-IGZO S/D electrodes are comparable with the conventional IGZO-TFTs with Mo electrodes. Besides, the transparency is remarkably improved. With the optimized condition, the transmittance of the IGZO-TFTs with Mo-IGZO S/D electrodes can be >70%. From XPS material analysis, the addition of Mo can change the oxygen bonding states in IGZO, which may be the reason for the observed conductor behavior of IGZO. Hence, the formation of Mo-IGZO S/D electrodes with co-sputtering is a simple, cost effective and low temperature method for achieving fully transparent IGZO-TFTs with high electrical performance and well reliability.

Original languageEnglish
Title of host publicationProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
EditorsShaozi Li, Yun Cheng, Ying Dai, Xiaohong Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1709-1713
Number of pages5
ISBN (Electronic)9781479931965
DOIs
StatePublished - 5 Nov 2014
Event2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
Duration: 26 Apr 201428 Apr 2014

Publication series

NameProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Volume3

Conference

Conference2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
CountryJapan
CitySapporo City, Hokkaido
Period26/04/1428/04/14

Keywords

  • IGZO
  • Mo doping
  • oxygen flow
  • sputter
  • thin film transistor

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