Nearly-fully-depleted (NFD), 0.15μm SOI CMOS in a CBiCMOS technology

Stephen Parke, Fariborz Assaderaghi, Chen-Ming Hu, Ping K. Ko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Complementary 0.15μm MOSFETs and double-diffused lateral BJTs have been successfully integrated in a 10-mask CBiCMOS process, by utilizing the process simplifications that are unique to thin-film SOI. The CMOS devices are built in a SIMOX silicon layer of intermediate thickness (130nm), leading to Nearly-Fully-Depleted (NFD) characteristics. Excellent short-channel behavior is observed down to Leff=0.15μm. P+ gate, NFD-SOI PMOSFETs with tox=5.5nm exhibit record high performance, with gmsat=274mS/mm and 352mS/mm at 300K and 80K, respectively. Propagation delays of 25ps/stage and 17ps/stage were measured on unloaded CMOS and NMOS ring oscillators, respectively, at Vdd=3.3V and room temperature.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages227-231
Number of pages5
ISBN (Electronic)0780309782
DOIs
StatePublished - 1 Jan 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

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