Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice P-type electron blocking layer for high MG doping efficiency

Zi Hui Zhang*, Sung Wen Huang Chen, Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Wengang Bi, Hao Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Original languageEnglish
Article number122
JournalNanoscale Research Letters
Volume13
Issue number1
DOIs
StatePublished - 1 Jan 2018

Keywords

  • DUV LED
  • Efficiency-droop-free
  • Electron leakage
  • Hole injection
  • Superlattice p-EBL

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