Near-unity photoluminescence quantum yield in MoS2

Matin Amani, Der-Hsien Lien, Daisuke Kiriya, Jun Xiao, Angelica Azcatl, Jiyoung Noh, Surabhi R. Madhvapathy, Rafik Addou, K. C. Santosh, Madan Dubey, Kyeongjae Cho, Robert M. Wallace, Si-Chen Lee, Jr-Hau He, Joel W. Ager, Xiang Zhang, Eli Yablonovitch, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

598 Scopus citations

Abstract

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages5
JournalScience
Volume350
Issue number6264
DOIs
StatePublished - 27 Nov 2015

Keywords

  • MONOLAYER MOS2
  • LAYER
  • HETEROSTRUCTURES
  • TRANSITION
  • DYNAMICS
  • DEFECTS
  • BANDGAP
  • STRAIN
  • STATES
  • WS2

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