@inproceedings{855d84246fc147a993c689cbc1059f76,
title = "Near infrared silicon quantum dots MOSFET detector",
abstract = "Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55μm, photoresponse as high as 2.0A/W was measured.",
author = "Shieh, {Jia Min} and Yu, {Wen Chien} and Wang, {Chao Kei} and Dai, {Bau Tong} and Hao-Chung Kuo and Huang, {Jung Y.} and Pan, {C. Ling}",
year = "2009",
month = dec,
day = "1",
doi = "10.1364/CLEO.2009.CFK2",
language = "English",
isbn = "9781557528698",
series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",
note = "null ; Conference date: 02-06-2009 Through 04-06-2009",
}