Near infrared silicon quantum dots MOSFET detector

Jia Min Shieh*, Wen Chien Yu, Chao Kei Wang, Bau Tong Dai, Hao-Chung Kuo, Jung Y. Huang, C. Ling Pan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55μm, photoresponse as high as 2.0A/W was measured.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
DOIs
StatePublished - 1 Dec 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2 Jun 20094 Jun 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period2/06/094/06/09

Fingerprint Dive into the research topics of 'Near infrared silicon quantum dots MOSFET detector'. Together they form a unique fingerprint.

  • Cite this

    Shieh, J. M., Yu, W. C., Wang, C. K., Dai, B. T., Kuo, H-C., Huang, J. Y., & Pan, C. L. (2009). Near infrared silicon quantum dots MOSFET detector. In Conference on Lasers and Electro-Optics, CLEO 2009 [5225510] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). https://doi.org/10.1364/CLEO.2009.CFK2