Near infrared silicon quantum dots MOSFET detector

Jia Min Shieh; Wen Chien Yu; Chao Kei Wang; Bau Tong Dai; Hao-Chung Kuo; Jung Y. Huang; C. Ling Pan

doi:10.1364/CLEO.2009.CFK2

Near infrared silicon quantum dots MOSFET detector

Jia Min Shieh^*, Wen Chien Yu, Chao Kei Wang, Bau Tong Dai, Hao-Chung Kuo, Jung Y. Huang, C. Ling Pan

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55μm, photoresponse as high as 2.0A/W was measured.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
DOIs	https://doi.org/10.1364/CLEO.2009.CFK2
State	Published - 1 Dec 2009
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2 Jun 2009 → 4 Jun 2009

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country	United States
City	Baltimore, MD
Period	2/06/09 → 4/06/09

Access to Document

10.1364/CLEO.2009.CFK2

Link to publication in Scopus

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Cite this

Shieh, J. M., Yu, W. C., Wang, C. K., Dai, B. T., Kuo, H-C., Huang, J. Y., & Pan, C. L. (2009). Near infrared silicon quantum dots MOSFET detector. In Conference on Lasers and Electro-Optics, CLEO 2009 [5225510] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). https://doi.org/10.1364/CLEO.2009.CFK2

@inproceedings{855d84246fc147a993c689cbc1059f76,

title = "Near infrared silicon quantum dots MOSFET detector",

abstract = "Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55μm, photoresponse as high as 2.0A/W was measured.",

author = "Shieh, {Jia Min} and Yu, {Wen Chien} and Wang, {Chao Kei} and Dai, {Bau Tong} and Hao-Chung Kuo and Huang, {Jung Y.} and Pan, {C. Ling}",

year = "2009",

month = dec,

day = "1",

doi = "10.1364/CLEO.2009.CFK2",

language = "English",

isbn = "9781557528698",

series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

note = "null ; Conference date: 02-06-2009 Through 04-06-2009",

}

Shieh, JM, Yu, WC, Wang, CK, Dai, BT, Kuo, H-C , Huang, JY & Pan, CL 2009, Near infrared silicon quantum dots MOSFET detector. in Conference on Lasers and Electro-Optics, CLEO 2009., 5225510, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 2/06/09. https://doi.org/10.1364/CLEO.2009.CFK2

Near infrared silicon quantum dots MOSFET detector. / Shieh, Jia Min; Yu, Wen Chien; Wang, Chao Kei; Dai, Bau Tong; Kuo, Hao-Chung ; Huang, Jung Y.; Pan, C. Ling.

Conference on Lasers and Electro-Optics, CLEO 2009. 2009. 5225510 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Near infrared silicon quantum dots MOSFET detector

AU - Shieh, Jia Min

AU - Yu, Wen Chien

AU - Wang, Chao Kei

AU - Dai, Bau Tong

AU - Kuo, Hao-Chung

AU - Huang, Jung Y.

AU - Pan, C. Ling

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AB - Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55μm, photoresponse as high as 2.0A/W was measured.

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T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - Conference on Lasers and Electro-Optics, CLEO 2009

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