Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Yi Chao Wang, Jia Min Shieh, Hsiao-Wen Zan, Ci Ling Pan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

Original languageEnglish
Pages (from-to)6982-6987
Number of pages6
JournalOptics Express
Volume15
Issue number11
DOIs
StatePublished - 28 May 2007

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