Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V DD=400 mV

Ali Saeidi, Anne S. Verhulst, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization characteristics. Well behaved InGaAs TFETs with a minimum swing of 55 mV/dec at room temperature are combined with high-quality single crystalline PZT capacitors, placed in series with the gate. When fully satisfying the exact NC matching conditions by a single crystalline ferroelectric that can perform a mono-domain state, a hysteresis-free (sub-10mV over 4 decades of current) NC-TFET with a sub-thermionic swing and an SS min of 40 mV/dec is demonstrated. In other devices, improvement in the subthreshold swing, down to 30 mV/dec, and analog current efficiency factor, up to 180 V -1 , are achieved in NC-TFETs with a hysteresis as small as 30 mV. Importantly, the I 60 FoM of the TFET is improved up to 2 orders of magnitude. The supply voltage is thereby reduced by 50%, down to 300 mV, providing the same drive current. Our results show that NC can open a new direction as a universal performance booster in the FET design by significantly improving the low I 60 and low overdrive of TFETs.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages13.4.1-13.4.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

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    Saeidi, A., Verhulst, A. S., Stolichnov, I., Alian, A., Iwai, H., Collaert, N., & Ionescu, A. M. (2019). Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V DD=400 mV. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 13.4.1-13.4.4). [8614583] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614583