Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AIGaN/GaN films

C. S. Ku*, J. M. Peng, W. C. Ke, H. Y. Huang, N. E. Tang, Wei-Kuo Chen, W. H. Chen, M. C. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The V-shape pit on the Al0.16Ga0.84N film was investigated. The study was carried out by using an UV excitation near-field scanning optical microscopy (NSOM) system different from cathodoluminescence type that avoids high energy electron damage. It was found that intensity of the extra peak band increased gradually from V-defect edges to its center. The results show that deep levels inside the V-pit were likely attributed to V ga-related defects.

Original languageEnglish
Pages (from-to)2818-2820
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
StatePublished - 4 Oct 2004

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