NBTI effects of pMOSFETs with different nitrogen dose implantation

Y. J. Lee, Y. C. Tang, M. H. Wu, Tien-Sheng Chao, P. T. Ho, David Lai, W. L. Yang, T. Y. Huang

Research output: Contribution to journalConference article

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Abstract

NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.

Original languageEnglish
Article number1315449
Pages (from-to)681-682
Number of pages2
JournalIEEE International Reliability Physics Symposium Proceedings
Volume2004-January
Issue numberJanuary
DOIs
StatePublished - 1 Jan 2004
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: 25 Apr 200429 Apr 2004

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    Lee, Y. J., Tang, Y. C., Wu, M. H., Chao, T-S., Ho, P. T., Lai, D., Yang, W. L., & Huang, T. Y. (2004). NBTI effects of pMOSFETs with different nitrogen dose implantation. IEEE International Reliability Physics Symposium Proceedings, 2004-January(January), 681-682. [1315449]. https://doi.org/10.1109/RELPHY.2004.1315449