National Project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Huey Liang Hwang*, C. W. Wang, K. H. Chang, C. H. Tsai, K. C. Leou, Kuei Shu Chang-Liao, Chun Chang Lu, S. C. Chang, F. C. Chiu, C. H. Liu, Albert Chin, Kow-Ming Chang, Bwo Ning Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

It is well known that the Taiwan Semiconductor industries play the very key roles for the worldwide IC foundry, and the advanced research of nanoelectronics is the lifeline for its long term developments. Professor Huey-liang Hwang effectively integrated the most outstanding research team and resource in Taiwan on the National Project on Nanometer CMOS Transistors for the 21 century, which is sponsored by the Ministry of Economic Affairs of ROC. A dozen of Professors from NTHU (National Tsing Hua University) with expertise at the novel materials and analysis and NCTU (National Chiao Tung University) with expertise at devices and reliability are devoted to the studies and are in collaboration with the world-wide-known company such as TSMC, and breakthrough of the key technologies of 45-32 nm technologies are achieved. The objective of this project is focused on the development of advanced metal gate/high-k MOSFET for 45 nm node generation and beyond, the efforts include the world first successful suppression the oxide/Si interfacial layer formation by using a bi-layer composite of HfO2 3.2 nm (ALD)/HfO2 1.5 nm (MBE), the results show a dielectric constant of 16 and an EOT of 1.15 nm, a Dit was estimated to be 4.6xl011cm-2eV-1 with the leakage at Vfb-lV being 8.5x10-6 A/cm2. Also, the thermal stability of HfO2, HfAlOx alloy and Al2O 3/HfO2 stack, prepared by ALD were compared, the incorporation of Al in alloy form gave superior characteristics by retaining an

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 8 Dec 200810 Dec 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period8/12/0810/12/08

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