Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh*, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The impact of narrow-width effects on high-frequency performance like fT, fMAX, and RF noise parameters, such as NF min and Rn, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher fMAX. However, these narrow-OD devices suffer fT degradation and higher NFmin, even with the advantage of lower R g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

Original languageEnglish
Article number6381483
Pages (from-to)109-116
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume60
Issue number1
DOIs
StatePublished - 7 Jan 2013

Keywords

  • f
  • f
  • multifinger
  • nanoscale CMOS
  • narrow width
  • NF
  • R
  • RF noise

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