Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen; Yiming Li; Yu Yu Chen; Chieh Yang Chen; Sheng Chia Hsu; Wen Tsung Huang; Chin Min Yang; Li Wen Chen; Sheng Yuan Chu

Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng Yuan Chu

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

Original language	English
Title of host publication	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages	147-150
Number of pages	4
State	Published - 2013
Event	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States Duration: 12 May 2013 → 16 May 2013

Publication series

Name	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume	1

Conference

Conference	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country	United States
City	Washington, DC
Period	12/05/13 → 16/05/13

Keywords

Fin width fffect
FinFET Device
Flat band voltage shift
Gate capacitance variation
HKMG
Substrate resistance

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Chen, C. H., Li, Y., Chen, Y. Y., Chen, C. Y., Hsu, S. C., Huang, W. T., Yang, C. M., Chen, L. W., & Chu, S. Y. (2013). Narrow fin width effect of HKMG bulk FinFET devices. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 147-150). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).

Chen, Chien Hung ; Li, Yiming ; Chen, Yu Yu ; Chen, Chieh Yang ; Hsu, Sheng Chia ; Huang, Wen Tsung ; Yang, Chin Min ; Chen, Li Wen ; Chu, Sheng Yuan. / Narrow fin width effect of HKMG bulk FinFET devices. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. pp. 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013).

@inproceedings{76447cf6e7cb45cfb7f04149d47a0981,

title = "Narrow fin width effect of HKMG bulk FinFET devices",

abstract = "In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.",

keywords = "Fin width fffect, FinFET Device, Flat band voltage shift, Gate capacitance variation, HKMG, Substrate resistance",

author = "Chen, {Chien Hung} and Yiming Li and Chen, {Yu Yu} and Chen, {Chieh Yang} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Yang, {Chin Min} and Chen, {Li Wen} and Chu, {Sheng Yuan}",

year = "2013",

language = "English",

isbn = "9781482205817",

series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

pages = "147--150",

booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

note = "null ; Conference date: 12-05-2013 Through 16-05-2013",

}

Chen, CH, Li, Y, Chen, YY, Chen, CY, Hsu, SC, Huang, WT, Yang, CM, Chen, LW & Chu, SY 2013, Narrow fin width effect of HKMG bulk FinFET devices. in Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, vol. 1, pp. 147-150, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, United States, 12/05/13.

Narrow fin width effect of HKMG bulk FinFET devices. / Chen, Chien Hung; Li, Yiming; Chen, Yu Yu; Chen, Chieh Yang; Hsu, Sheng Chia; Huang, Wen Tsung; Yang, Chin Min; Chen, Li Wen; Chu, Sheng Yuan.

Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Narrow fin width effect of HKMG bulk FinFET devices

AU - Chen, Chien Hung

AU - Li, Yiming

AU - Chen, Yu Yu

AU - Chen, Chieh Yang

AU - Hsu, Sheng Chia

AU - Huang, Wen Tsung

AU - Yang, Chin Min

AU - Chen, Li Wen

AU - Chu, Sheng Yuan

PY - 2013

Y1 - 2013

N2 - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

AB - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

KW - Fin width fffect

KW - FinFET Device

KW - Flat band voltage shift

KW - Gate capacitance variation

KW - HKMG

KW - Substrate resistance

UR - http://www.scopus.com/inward/record.url?scp=84881106898&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84881106898

SN - 9781482205817

T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

SP - 147

EP - 150

BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

Y2 - 12 May 2013 through 16 May 2013

ER -

Narrow fin width effect of HKMG bulk FinFET devices

Abstract

Publication series

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Keywords

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