@inproceedings{76447cf6e7cb45cfb7f04149d47a0981,
title = "Narrow fin width effect of HKMG bulk FinFET devices",
abstract = "In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.",
keywords = "Fin width fffect, FinFET Device, Flat band voltage shift, Gate capacitance variation, HKMG, Substrate resistance",
author = "Chen, {Chien Hung} and Yiming Li and Chen, {Yu Yu} and Chen, {Chieh Yang} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Yang, {Chin Min} and Chen, {Li Wen} and Chu, {Sheng Yuan}",
year = "2013",
language = "English",
isbn = "9781482205817",
series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
pages = "147--150",
booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
note = "null ; Conference date: 12-05-2013 Through 16-05-2013",
}