Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages147-150
Number of pages4
StatePublished - 2013
EventNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 12 May 201316 May 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume1

Conference

ConferenceNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period12/05/1316/05/13

Keywords

  • Fin width fffect
  • FinFET Device
  • Flat band voltage shift
  • Gate capacitance variation
  • HKMG
  • Substrate resistance

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