Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Zih Ying Yang, Satoshi Ishii*, Anh Tung Doan, Satish Laxman Shinde, Thang Duy Dao, Yu Ping Lo, Kuo Ping Chen, Tadaaki Nagao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

Original languageEnglish
Article number1900982
Number of pages8
JournalAdvanced Optical Materials
Volume8
Issue number8
DOIs
StatePublished - 17 Apr 2020

Keywords

  • narrow-band emission
  • refractory materials
  • Tamm plasmon polaritons
  • thermal emission
  • titanium nitrides

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