Narrow-band band-pass filters on silicon substrates at 30 GHz

D. S. Yu*, C. F. Cheng, K. T. Chan, Albert Chin, S. P. McAlister, C. Zhu, M. F. Li, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations

Abstract

Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.

Original languageEnglish
Pages (from-to)1467-1470
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
DOIs
StatePublished - 29 Sep 2004
Event2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States
Duration: 6 Jun 200411 Jun 2004

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