Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 29 Sep 2004|
|Event||2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States|
Duration: 6 Jun 2004 → 11 Jun 2004