Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Yi-Chia Chou*, Federico Panciera, Mark C. Reuter, Eric A. Stach, Frances M. Ross

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.

Original languageEnglish
Pages (from-to)5686-5689
Number of pages4
JournalChemical Communications
Volume52
Issue number33
DOIs
StatePublished - 28 Apr 2016

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