Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer

C. H. Huang*, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. C. Liao, Y. H. Su, Pei-Wen Li, C. Y. Liu, C. S. Lai, J. H. Ting, C. S. Chu, C. S. Lee, T. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely controlled by a polysilicon layer as a sacrificial layer in the implantation step to acquire a desirable implant depth. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step with 4×1016 /cm-2,160KeV, H2+ ions. The as-implanted wafer was contained a hydrogen-rich buried layer which depth from the top surface is less than 100 nm. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer under 10-minute microwave irradiation after the bonding step. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

Original languageEnglish
Title of host publicationNanomanufacturing
Pages84-89
Number of pages6
DOIs
StatePublished - 1 Dec 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 17 Apr 200621 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume921
ISSN (Print)0272-9172

Conference

Conference2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period17/04/0621/04/06

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