Nanostructures on epitaxial SiGe films on silicon

L. J. Chen*, Wen-Wei Wu, S. W. Lee, H. C. Chen, T. H. Yang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Nanodots and nano-rings are basic building blocks of nanostructures. Si 1-x Ge x heterostructures are attractive for electronic and optoelectronic devices. In this paper, we review the recent progresses in the growth of metal silicide quantum dot arrays and Si-Ge quantum rings on epitaxial SiGe thin films on silicon.

Original languageEnglish
Pages241-252
Number of pages12
StatePublished - 28 Oct 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 9 May 200414 May 2004

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period9/05/0414/05/04

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