This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.
|Title of host publication||Nitride Semiconductor Light-Emitting Diodes (LEDs)|
|Subtitle of host publication||Materials, Technologies and Applications|
|Number of pages||34|
|State||Published - 1 Dec 2013|
- Gallium nitride
- Light-emitting diodes