Nanostructured LEDs

Chien-Chung Lin*, D. W. Lin, C. H. Chiu, Z. Y. Li, Yu-Pin Lan, J. J. Huang, Hao-Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.

Original languageEnglish
Title of host publicationNitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publicationMaterials, Technologies and Applications
PublisherElsevier Ltd
Pages216-249
Number of pages34
ISBN (Print)9780857095077
DOIs
StatePublished - 1 Dec 2013

Keywords

  • Gallium nitride
  • GaN
  • Light-emitting diodes
  • Nanotechnology

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