Nanostructured LED

Chien Chung Lin*, Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Yu Pin Lan, Jian Jang Huang, Hao Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.

Original languageEnglish
Title of host publicationNitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publicationMaterials, Technologies, and Applications: Second Edition
PublisherElsevier
Pages243-271
Number of pages29
ISBN (Electronic)9780081019436
ISBN (Print)9780081019429
DOIs
StatePublished - 1 Jan 2018

Keywords

  • GaN
  • Light emitting diodes
  • Nanotechnology

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