In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.
|Title of host publication||Nitride Semiconductor Light-Emitting Diodes (LEDs)|
|Subtitle of host publication||Materials, Technologies, and Applications: Second Edition|
|Number of pages||29|
|State||Published - 1 Jan 2018|
- Light emitting diodes