Nanostructure structure effect on transition in Pi-cells

Chia Tien Lee*, Szu Fen Chen, Huang-Ming Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

It is well known that the operating state (bend state) of a pi-cell must be nucleated then uniformly spread the bend orientation in splay state before operation. In this study, the random distribution of silicon oxide nano-particles was investigated for decreasing the time of splay-to-bend transition in pi-cells. Under the optimum conditions, the 50% reduction of splayto-bend transition time was found in nanostructure structure treated surfaces.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages78-80
Number of pages3
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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