Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack

Hui Wen Cheng, Yiming Li*, Chun Yen Yiu, Hsin Wen Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this study, the work function fluctuation (WKF) induced device variability in 16-nm-gate bulk and SOI FinFETs is for the first time explored by using an experimentally calibrated three-dimensional (3D) device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region of device to examine the associated electrostatic and carriers' transport properties, concurrently capturing random grain's size, number and position fluctuations. Both bulk and SOI FinFETs with TiN/HfO2 gate stack are simulated, based upon experimentally available data. The approach of localized WKF simulation method is thus intensively performed to explore the device's variability including comparison between bulk and SOI FinFETs. The results of this study enable us to get an even reasonably accurate account of the random grain's number, position and size effects.

Original languageEnglish
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages287-290
Number of pages4
DOIs
StatePublished - 2011
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: 8 Sep 201110 Sep 2011

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period8/09/1110/09/11

Keywords

  • 3D device simulation
  • aspect ratio
  • bulk FinFET
  • localized work function fluctuation
  • on/off-state current fluctuation
  • random grain number
  • random grain position
  • size of metal grain
  • SOI FinFET
  • threshold voltage fluctuation

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    Cheng, H. W., Li, Y., Yiu, C. Y., & Su, H. W. (2011). Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 287-290). [6035025] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035025