Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices

Chun Ning Lai, Chien Yang Chen, Yi-ming Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrödinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally, the random positions of metal grain are discussed. The WK of metal grain in the corner of square-shaped channel possesses greater impact on characteristic fluctuation because of enhanced corner effect. Devices with a large channel width and small nanosized metal grains suffer from relatively smaller percentage of fluctuation.

Original languageEnglish
Title of host publication18th International Workshop on Computational Electronics, IWCE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9780692515235
DOIs
StatePublished - 19 Oct 2015
Event18th International Workshop on Computational Electronics, IWCE 2015 - West Lafayette, United States
Duration: 2 Sep 20154 Sep 2015

Publication series

Name18th International Workshop on Computational Electronics, IWCE 2015

Conference

Conference18th International Workshop on Computational Electronics, IWCE 2015
CountryUnited States
CityWest Lafayette
Period2/09/154/09/15

Keywords

  • Corner effect
  • Gate-All-Around
  • MOS devices
  • Nanowire
  • Random confinement effect
  • Schrödinger-Poisson Equations
  • Threshold voltage fluctuation
  • Workfunction fluctuation

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