Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

Yang Kyu Choi*, Daewon Ha, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

40 Scopus citations


Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 nm show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.

Original languageEnglish
Pages (from-to)447-448
Number of pages2
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 1 Sep 2001


  • Mobility enhancement
  • Nano-CMOS
  • Quantum confinement of inversion charge
  • Raised S/D
  • Selective Ge
  • Threshold voltage shift
  • Ultrathin body

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