Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

Yee Chia Yeo, Vivek Subramanian, Jakub Kedzierski, Peiqi Xuan, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

We report the concept and demonstration of a nanoscale ultra-thin-body silicon-on-insulator (SOI) P-channel MOSFET with a Si1-xGex/Si heterostructure channel. First, a novel lateral solid-phase epitaxy process is employed to form an ultra-thin-body that suppresses the short-channel effects. Negligible threshold voltage roll-off is observed down to a channel length of 50 nm. Second, a selective silicon implant that breaks up the interfacial oxide is shown to facilitate unilateral crystallization to form a single crystalline channel. Third, the incorporation of SiGe in the channel resulted in a 70% enhancement in the drive current.

Original languageEnglish
Pages (from-to)161-163
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number4
DOIs
StatePublished - 1 Apr 2000

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