Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer

T. H. Lee*, C. H. Huang, Y. Y. Yang, T. Suryasindhu, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

This article presents a sacrificial layer method of forming a nanoscale thick silicon-on-insulator thin film, avoiding the channeling effect of implantation and eliminating a subsequent thinning process. However, because of the light mass of hydrogen, it is difficult with the implantation technique to have a shallow implant depth for splitting a layer at a thickness less than 100 nm by a traditional Smart-Cut process. This study proves that using a polycrystalline-Si layer as a sacrificial layer in the initial implantation step can easily define a silicon transfer layer down to a thickness of tens of nanometers.

Original languageEnglish
Article number203119
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
StatePublished - 23 Nov 2007

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