Nanoscale metal silicides

L. J. Chen*, Wen-Wei Wu, S. Y. Chen, H. C. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Metal silicide thin films are integral parts of all microelectronics devices. They have been used as ohmic contact, Schottky barrier contact, gate electrode, local interconnect and diffusion barrier. Silicides of nanoscale are named nanosilicides. As the IC industry moves into the nano era, metal silicide contacts are naturally falling into this category. In this paper, we present an overview of the recent progresses on the study of nanoscale silicides.

Original languageEnglish
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
Pages134-138
Number of pages5
DOIs
StatePublished - 1 Dec 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: 15 May 200616 May 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Conference

ConferenceExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
CountryChina
CityShanghai
Period15/05/0616/05/06

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