Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots

Chung Yen Chien*, Yu Jui Chang, Kuan Hung Chen, Wei Ting Lai, Tom George, Axel Scherer, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si3N4 layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers. A two-step mechanism of dissolution of Si within the Ge QDs prior to oxidation is proposed.

Original languageEnglish
Article number435602
JournalNanotechnology
Volume22
Issue number43
DOIs
StatePublished - 28 Oct 2011

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