Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density

Shih Chun Ling*, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang, Shun-Jen Cheng, Jenq Dar Tsay

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a -plane GaN grown on r -plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3× 1010 to 3.5× 108 cm-2. From the temperature-dependent photoluminescence, the quantum efficiency of the a -plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a -plane GaN films with low dislocation density and high crystal quality via NRELOG.

Original languageEnglish
Article number251912
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - 22 Jun 2009

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