Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Yi Chun Lai*, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou Chung Chi, Pei-Chen Yu, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this work, we demonstrate homogeneously distributed In 0.3 Ga 0.7 N/GaN quantum disks (QDs), with an average diameter below 10 nm and a high density of 2.1 ×10 11 cm -2 , embedded in 20 nm tall nanopillars. The scalable top-down fabrication process involves the use of self-assembled ferritin bio-templates as the etch mask, spin coated on top of a strained In 0.3 Ga 0.7 N/GaN single quantum well (SQW) structure, followed by a neutral beam etch (NBE) method. The small dimensions of the iron cores inside ferritin and nearly damage-free process enabled by the NBE jointly contribute to the observation of photoluminescence (PL) from strain-relaxed In 0.3 Ga 0.7 N/GaN QDs at 6 K. The large blueshift of the peak wavelength by over 70 nm manifests a strong reduction of the quantum-confined Stark effect (QCSE) within the QD structure, which also agrees well with the theoretical prediction using a 3D Schrödinger equation solver. The current results hence pave the way towards the realization of large-scale III-N quantum structures using the combination of bio-templates and NBE, which is vital for the development of next-generation lighting and communication devices.

Original languageEnglish
Article number425401
Issue number42
StatePublished - 15 Sep 2016


  • InGaN/GaN
  • bio-template
  • neutral beam etch
  • quantum disks
  • single quantum well

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