Nanomechanical properties of GaSe thin films deposited on Si(1 1 1) substrates by pulsed laser deposition

Sheng Rui Jian*, Jenh-Yih Juang, Chih-Wei Luo, Shin An Ku, Kaung-Hsiung Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(1 1 1) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (0 0 0 l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple "pop-in" events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young's modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young's modulus being increased from 1.2 ± 0.1 to 1.8 ± 0.1 GPa and from 39.6 ± 1.2 to 68.9 ± 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 °C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films.

Original languageEnglish
Pages (from-to)124-127
Number of pages4
JournalJournal of Alloys and Compounds
StatePublished - 25 Nov 2012


  • GaSe thin films
  • Hardness
  • Nanoindentation
  • XRD

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